19 February 2009 High quality AlN films grown by pulsed atomic-layer epitaxy
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Abstract
In this paper, we report growth of AlN epilayers by pulsed atomic-layer epitaxy (PALE) method, by which the group III element sources and NH3 were alternatively transported into the reactor. We have systematically investigated the effects of growth conditions of PALE on the crystal quality of AlN epilayers. By optimizing the PALE growth conditions, the root mean square (rms) of AlN layers was 1.319 nm and the full width at half-maximum (FWHM) was 0.18 arcmin, room-temperature band edge absorbing peak at 198 nm was easily achieved, indicating the small mosaicity and low dislocation density of the films.
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Hu Wang, Hu Wang, Ruofei Xiang, Ruofei Xiang, Qiang Zhang, Qiang Zhang, Jiangnan Dai, Jiangnan Dai, Qinghua He, Qinghua He, Zhihao Wu, Zhihao Wu, Changqing Chen, Changqing Chen, } "High quality AlN films grown by pulsed atomic-layer epitaxy", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72791J (19 February 2009); doi: 10.1117/12.823268; https://doi.org/10.1117/12.823268
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