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20 May 2009 Infrared antireflection DLC films by femtosecond pulsed laser deposition
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Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72820R (2009) https://doi.org/10.1117/12.830809
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
Diamond-like Carbon(DLC) films are deposited by Ti:Sapphire femtosecond pulsed laser(800nm, 120fs-2ps, 3.3W, 1-1000Hz) at room temperature. The substrate is n-type Si(100), and the target is 99.999%-purity graphite. After a great lot of experiments, optimal technical parameters, which are 1000Hz repetition frequency, 120fs pulse-width, 5cm-distance between target and underlay and 1014W/cm2 power-density, were used to deposite 443nm thick DLC film. Raman spectrum measurement shows a broad peak with a center at 1550 cm-1 for all films, similar to those of typical diamond-like carbon films prepared using other methods. And sp3-bond content reaches 67% analyzed by XPS. There is no nick on the film when scraped 105 times by a RS-5600 friction test machine under the pressure of 9.8N. The infrared transmittance increases along with the oxygen pressure when between 0.03 Pa and 2 Pa. The result shows that oxygen is effective in etching sp2-bond content. The extreme infrared transmittance of Si slice deposited DLC film on single surface is higher than 64% at 3-5μm, superior to 53% when being uncoated.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuyun Wang, Yanlong Guo, Xiaobing Wang, Yong Cheng, Huisheng Wang, and Xu Liu "Infrared antireflection DLC films by femtosecond pulsed laser deposition", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72820R (20 May 2009); https://doi.org/10.1117/12.830809
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