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20 May 2009 Transparent conductive titanium-doped indium oxide films prepared by direct current magnetron sputtering
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Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72821C (2009) https://doi.org/10.1117/12.830868
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
Titanium-doped indium oxide (ITiO) thin films are deposited by direct current magnetron sputtering with different sputtering powers from a titanium-doped indium oxide ceramic target. The electrical and optical properties, microstructure characteristics of ITiO thin films are examined. The results demonstrate that all films show polycrystalline structure and the crystallinity is improved with increasing sputtering power. The resistivity of the ITiO films decreases with increasing sputtering power, and the lowest resistivity is about 4.13×10-4 Ωcm with sputtering power of 180 W. The average transmittance above 80% is obtained for the ITiO films in a wide spectral range of 400~1500 nm.
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Limei Lin, Fachun Lai, Yan Qu, and Rongquan Gai "Transparent conductive titanium-doped indium oxide films prepared by direct current magnetron sputtering", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72821C (20 May 2009); doi: 10.1117/12.830868; https://doi.org/10.1117/12.830868
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