Aluminum nitride (AlN) thin films are deposited by means of d.c. magnetism filter arc deposition. Various processing
parameters, such as 0-V, -50V, -100V, -150V bias voltage and arc current of 55A, 75A and 90A, are optimized.
Ellipsometry, X-ray diffraction (XRD) and fourier transform infra-red (FTIR) are carried out to characterize AlN thin
films' properties. For 0-V and -50V bias, AlN films, prepared on silicon substrate, are show with 002 preferred
orientation, and the films are oriented to 100 at the -100V bias. However, the films has no preferred orientation when
using -150V bias voltage. Furthermore, the films are also shown without preferred orientation at 50A arc current (with
-50 bias voltage), and presented obvious preferred orientation at 75A and 90A. In addition, ellipsometry and FTIR
spectrum has shown that all the films extinction coefficient are near to zero and refractive index varied from 1.7 to 2.4.
The deposition rate increases with the decrease of arc current and decreases with the positive bias voltage. By combining
the spectrum of XRD and FTIR, the AlN films with good crystalline orientation, present obvious absorbing peak in To
(A1) or To(E1) vibration.