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20 May 2009 Methods for improving ion beam etching uniformity of large-sized DOEs
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Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72821O (2009) https://doi.org/10.1117/12.830882
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
DOE is often produced by lithography and ion beam etching. The etching depth error directly affects the diffraction performance of DOE. The uniformity of ion beam etching depth is particularly important for large-sized DOEs in that errors by ion beam etching uniformity would result in an obvious aberrant spot of intensity in the focal area of DOE, which consumedly reduces the uniformity of target field in uniform illumination. On the basis of the KZ-400 ion beam etching equipment the method of improving DOE ion beam etching uniformity is investigated. The step-by-step method is used to improve the uniformity of ion beam etching, in which the etching time and location are adjusted. Experimental result shows that in the range of 190mm along the major axis of ion beam source the etching uniformity of DOE increases from ±5% to ±1.3%.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ying Xiong, Xiaobo Zhang, Gang Liu, Ying Liu, Dequan Xu, and Yangchao Tian "Methods for improving ion beam etching uniformity of large-sized DOEs", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72821O (20 May 2009); https://doi.org/10.1117/12.830882
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