20 May 2009 Preparation of TiN solar spectrally selective absorbing thin film by DC magnatron sputtering
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Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72821P (2009) https://doi.org/10.1117/12.830883
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
TiN solar spectrally selective absorbing thin film with good spectrum absorbing selectivity is prepared by DC magnatron sputtering, using Ti as target material and Argon as working gas, on Si(111) substrate. Research shows: when keeping other technique parameter constant, with sputtering air pressure varied 0.35-1.5pa, cubic phase TiN thin films with a (200) preferred orientation are Synthesized; and thin film prepared with a sputtering air pressure of 0.35pa, is compact and uniform, with a golden colar and a film thickness of 132nm, shows the best crystallinity, least resistivity of 33.8Ω×cm (close to bulk resistivity of TiN), with average absorptivity α of visible light-near infrared (wavelength ranges 400-1000nm) at 0.83, and maximum reflectivity R of infrared at 0.90. Through analysis of film structure, film thickness, absorptivity and reflectivity, TiN thin film prepared with a sputtering air pressure of 0.35pa, has good spectrum absorbing selectivity, and therefore has high application potential and value in heat absorpbing surface of solar collector or photothermal conversion building material directly.
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Shuying Fu, Shuying Fu, Zhenquan Lai, Zhenquan Lai, Wei Zhong, Wei Zhong, Xiurong Zhu, Xiurong Zhu, } "Preparation of TiN solar spectrally selective absorbing thin film by DC magnatron sputtering", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72821P (20 May 2009); doi: 10.1117/12.830883; https://doi.org/10.1117/12.830883
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