21 May 2009 Organic light emitting devices based on two novel silole derivatives
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Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 728237 (2009) https://doi.org/10.1117/12.831020
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
High performance organic light-emitting devices using two silole derivatives of 2,2,3,3-4,4-bisthienylsilole (TPBTSi) and 2,2,4,4-tetraphenyl-3,3-Bisthienylsilole (TPB3TSi) as emitting materials are fabricated by vacuum thermal evaporation method. N, N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB) and tris(8-hydroxyquinolinolato) aluminum (Alq3) are used as hole transporting layer (HTL) and electron transporting layer (ETL), respectively. The luminance-voltage and current density-voltage characteristics of two devices are investigated, and the performance difference is discussed. The results demonstrate that at a bias voltage of 16 V, the devices consisting of novel emissive materials of TPBTSi and TPB3TSi have a maximum luminance of 11290 and 7508 cd/m2, and the peaks of electroluminescence (EL) spectra locate at 516 and 580 nm, respectively.
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Qing Li, Junsheng Yu, Lu Li, Yadong Jiang, Xiaowei Zhan, "Organic light emitting devices based on two novel silole derivatives", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 728237 (21 May 2009); doi: 10.1117/12.831020; https://doi.org/10.1117/12.831020
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