High performance organic light-emitting devices using two silole derivatives of 2,2,3,3-4,4-bisthienylsilole (TPBTSi)
and 2,2,4,4-tetraphenyl-3,3-Bisthienylsilole (TPB3TSi) as emitting materials are fabricated by vacuum thermal
evaporation method. N, N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB) and
tris(8-hydroxyquinolinolato) aluminum (Alq3) are used as hole transporting layer (HTL) and electron transporting layer
(ETL), respectively. The luminance-voltage and current density-voltage characteristics of two devices are investigated,
and the performance difference is discussed. The results demonstrate that at a bias voltage of 16 V, the devices
consisting of novel emissive materials of TPBTSi and TPB3TSi have a maximum luminance of 11290 and 7508 cd/m2,
and the peaks of electroluminescence (EL) spectra locate at 516 and 580 nm, respectively.