21 May 2009 Electrical characteristics of phosphorescent organic light emitting devices with various emissive film thickness
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Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72823A (2009) https://doi.org/10.1117/12.831023
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
Multilayer organic light-emitting diodes are fabricated with a structure of ITO/CuPc/NPB/CBP:(t-bt)2Ir(acac)/BCP/Alq/LiF:Al, and the current density vs voltage characteristic of organic phosphorescent devices is investigated. The current density characteristics of triple-layer devices with different emission layer thickness is simulated into three regions, which are no-emission region, emission region and saturated region, corresponding to ohmic contact model, trap charge limited current model and space charge limited current model. The film thickness of emission layer shows obvious effect on the device current density.
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Tao Wang, Tao Wang, Junsheng Yu, Junsheng Yu, Jun Wang, Jun Wang, Lu Li, Lu Li, Yadong Jiang, Yadong Jiang, } "Electrical characteristics of phosphorescent organic light emitting devices with various emissive film thickness", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72823A (21 May 2009); doi: 10.1117/12.831023; https://doi.org/10.1117/12.831023
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