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18 May 2009 Interaction between femtosecond laser and silicon nitride crystal film
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Abstract
The interaction between femtosecond laser and silicon nitride crystal film(β- Si3N4)was theoretical analyzed and numerical studied in detail with Fokker-Planck (F-P) equation. The F-P equation was studied with the Difference Method which mainly considers that the laser intensity is, distributes in time and space, absorbed by target. In the calculating, the important factors such as the radius of the laser beam r0 (which is defined as the distance from the center at which the intensity drops to 1/e of the maximum intensity) were 10μm, 30μm and 50μm, the values of the laser fluence were 6.0 J/cm2, 9.0 J/cm2 and 12.0 J/cm2, respectively. The damage threshold and crater shape of Si3N4 film under different laser pulse were analyzed. The effect of ablation verse the pulse duration and the laser intensity distributing in time and space were also discussed.
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Wentao Zhang, Kaige Wang, Jintao Bai, and Zhaoyu Ren "Interaction between femtosecond laser and silicon nitride crystal film", Proc. SPIE 7284, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 72840W (18 May 2009); https://doi.org/10.1117/12.832091
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