31 March 2009 Effects of annealing temperature on the performance of the Schottky diode fabricated with TiO2 sol-gel
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Abstract
Various conbinations of TiO2 sol-gel were prepared to fabricate Schottky diodes. Pure TiO2 sol-gel was spin-coated to the various substrates such as glass, silicon wafer, and cellulose. The sol-gel driven TiO2 films were generated cracks all over the surface during the annealing process. To prevent cracks, polyethylene glycol (PEG) was added to TiO2 sol-gel solution. TiO2-PEG sol-gel was spin-coated to the substrate and heat treated at 100, 200, and 300°C for 1 h. The film thicknesses were 230, 190, and 129 nm for the sample heated at 100, 200, and 300°C, respectively, and no cracks were observed. The FTIR pesk at 3380 cm-1 corresponds to -OH stretching mode and disappeared as the heating temperature increased. The characteristic peaks of PEG at 2875 and 1120 cm-1 also disappeared as the heating temperature increased. The Schottky diodes comprised of Al/PEG-TiO2/Au with various heat treatment were fabricated. The forward current was drastically increased as the annealing temperature increased. The plots of parabolic conduction curves based on Schottky conduction model, Poole-Frenkel conduction model, and space charge limitted conduction model show nonlinear relationship. These nonlinear relationship indicates that the conduction mechanism is not purely single conduction mechanism.
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Y. Chen, K. H. Yoo, K. S. Kang, Jaehwan Kim, "Effects of annealing temperature on the performance of the Schottky diode fabricated with TiO2 sol-gel", Proc. SPIE 7291, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2009, 72910Q (31 March 2009); doi: 10.1117/12.815584; https://doi.org/10.1117/12.815584
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