Paper
30 March 2009 An SOI-based tuning-fork gyroscope with high quality factors
Ren Wang, Shiva K. Durgam, Zhili Hao, Linda L. Vahala
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Abstract
This paper reports on the design, fabrication, and testing of a SOI-based tuning-fork gyroscope with high Quality factors (Qs). A tuning-fork structure with high Qs is designed and is integrated with on-chip electrostatic transducers for excitation and detection. With a one-mask fabrication technology, this gyroscope design is fabricated on a SOI wafer with a 30μm-thick device layer. The fabricated devices are further tested for their preliminary performance characterization. The measured Qs of a fabricated gyroscope are 162,060 for the drive mode and 85,168 for the sense mode at 16.8kHz. In order to enhance its rate sensitivity, the frequency of the sense mode is tuned using electrostatic tuning toward that of the drive mode and a minimum frequency split of 6Hz between the two modes is demonstrated. Under this nearly matched-mode condition, a prototype device shows a measured rate sensitivity of 0.02mV/°/sec. The theoretical mechanical resolution due to Brownian noise is 0.3°/hr/√Hz.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ren Wang, Shiva K. Durgam, Zhili Hao, and Linda L. Vahala "An SOI-based tuning-fork gyroscope with high quality factors", Proc. SPIE 7292, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2009, 729238 (30 March 2009); https://doi.org/10.1117/12.817692
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Cited by 4 scholarly publications.
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KEYWORDS
Gyroscopes

Electrodes

Microelectromechanical systems

Signal detection

Polarization

Semiconducting wafers

Sensors

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