6 January 2009 The dynamics of optical bistability layer crystals
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Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 729706 (2009) https://doi.org/10.1117/12.823614
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania
Abstract
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.
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Claudia Yu. Zenkova, Claudia Yu. Zenkova, } "The dynamics of optical bistability layer crystals", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 729706 (6 January 2009); doi: 10.1117/12.823614; https://doi.org/10.1117/12.823614
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