Simulations of 462 nm InGaN quantum well semiconductor lasers

Andrei Drăgulinescu; Antti Laakso; Mihail Dumitrescu; Mircea Guină

doi:10.1117/12.823625

6 January 2009 Simulations of 462 nm InGaN quantum well semiconductor lasers

Andrei Drăgulinescu, Antti Laakso, Mihail Dumitrescu, Mircea Guină

Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72970F (2009) https://doi.org/10.1117/12.823625
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania

Abstract

III-nitride semiconductor materials have received much attention in the past few years, due mainly to their relatively wide band gap and high emission efficiency. We simulated a 462 nm InGaN quantum well semiconductor laser, with different properties (different layer thicknesses, layer dopings and In composition in different layers of the structure) and we compared the results for the fourteen situations that we analyzed. Thus we can choose the best structure, in terms of the laser power and threshold current, to be used in applications.

Citation Download Citation

Andrei Drăgulinescu, Antti Laakso, Mihail Dumitrescu, and Mircea Guină "Simulations of 462 nm InGaN quantum well semiconductor lasers", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72970F (6 January 2009); https://doi.org/10.1117/12.823625

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