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7 January 2009 Influence of the light irradiation on optical characteristics of As 2(SxSe1-x)3 thin films obtained from chemical solutions
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Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72970V (2009) https://doi.org/10.1117/12.823641
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania
Abstract
Results of researches on technology of deposition of thin layers of mixed composition As2(SxSe1-x)3 (0 <x <1), obtained from chemical solutions of separate components As2S3 and As2Se3 are given, and some optical properties (transmittance and recording of holographic information) were studied. The photodarkening of layers and shift of edge of absorption in infra-red (IR) area were found at ultra-violet (UV) and actinic irradiations. The maximum efficiency of holographic writing of diffraction gratings (with Ar laser recording (λ=488 nm)) on thin layers is 2.5 % and after additional processing in the negative etching is 36 %.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. S. Iovu, S. A. Buzurniuc, V. I. Verlan, A. Prisacari, and L. Malahov "Influence of the light irradiation on optical characteristics of As 2(SxSe1-x)3 thin films obtained from chemical solutions", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72970V (7 January 2009); https://doi.org/10.1117/12.823641
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