Influence of the light irradiation on optical characteristics of As2(SxSe1-x)3 thin films obtained from chemical solutions

M. S. Iovu; S. A. Buzurniuc; V. I. Verlan; A. Prisacari; L. Malahov

doi:10.1117/12.823641

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7 January 2009 Influence of the light irradiation on optical characteristics of As ₂(S_xSe_1-x)₃ thin films obtained from chemical solutions

M. S. Iovu, S. A. Buzurniuc, V. I. Verlan, A. Prisacari, L. Malahov

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Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72970V (2009) https://doi.org/10.1117/12.823641
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania

Abstract

Results of researches on technology of deposition of thin layers of mixed composition As₂(SxSe_1-x)₃ (0 <x <1), obtained from chemical solutions of separate components As₂S3 and As₂Se₃ are given, and some optical properties (transmittance and recording of holographic information) were studied. The photodarkening of layers and shift of edge of absorption in infra-red (IR) area were found at ultra-violet (UV) and actinic irradiations. The maximum efficiency of holographic writing of diffraction gratings (with Ar laser recording (λ=488 nm)) on thin layers is 2.5 % and after additional processing in the negative etching is 36 %.

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M. S. Iovu, S. A. Buzurniuc, V. I. Verlan, A. Prisacari, and L. Malahov "Influence of the light irradiation on optical characteristics of As ₂(S_xSe_1-x)₃ thin films obtained from chemical solutions", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72970V (7 January 2009); https://doi.org/10.1117/12.823641

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