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7 January 2009 Guided and leaky modes in hexagon-type silicon-on-insulator slabs
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Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72971M (2009) https://doi.org/10.1117/12.823669
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania
Abstract
Guided and leaky modes in asymmetric, hexagon-type, silicon-on-insulator (SOI) slabs are analyzed. Guided modes are obtained through the plane-wave expansion method (PWEM) in 3D with a vertical supercell. Leaky modes are obtained through the scattering matrix method (SMM) applied for the configuration known as "variable angle reflectance spectroscopy". The analysis is carried out along different symmetry directions (Γ-K and Γ-M) for TE and TM polarization of the incident plane wave. A complete picture of the modes in hexagon-type SOI slabs is obtained. This is useful in identifying the possible low-loss spectral windows that can be used for functional devices e.g. cavities and line defect waveguides.
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Cazimir G. Bostan, Paul Schiopu, and Oana Mita "Guided and leaky modes in hexagon-type silicon-on-insulator slabs", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72971M (7 January 2009); https://doi.org/10.1117/12.823669
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