7 January 2009 Shallow acceptors in a quantum well under intense laser fields
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Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72971S (2009); doi: 10.1117/12.823675
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania
Abstract
In this paper we have studied comparatively the effects of the high-frequency laser field and impurity position on the transition energy associated with a simple neutral acceptor and with a singly ionized, double acceptor in GaAs/AlGaAs quantum wells. A blue shift of the transition energies when the laser field intensity increases is predicted.
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Adrian Radu, Ecaterina C. Niculescu, Liliana M. Burileanu, "Shallow acceptors in a quantum well under intense laser fields", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72971S (7 January 2009); doi: 10.1117/12.823675; https://doi.org/10.1117/12.823675
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Quantum wells

Semiconductor lasers

Semiconductors

Heterojunctions

Ions

Laser energy

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