7 January 2009 On the stability of MOS Hall devices
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Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72972O (2009) https://doi.org/10.1117/12.823708
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania
Abstract
In a system of measuring in which the Hall device is used as input transducer, its stability is essential for transfer constant of system. In this work is analyzed the variation of the charge carriers density on the stability of magnetic sensors realized on the MOS Hall plates. In the same time it is emphasized the way in which the adequate choice of the material properties and geometry of the device allow an increase in its stability.
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George Căruntu, George Căruntu, Cornel Panait, Cornel Panait, } "On the stability of MOS Hall devices", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72972O (7 January 2009); doi: 10.1117/12.823708; https://doi.org/10.1117/12.823708
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