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6 May 2009 Silicon germanium oxide (SixGe1-xOy) infrared material for uncooled infrared detection
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Thin film SixGe1-xOy infrared sensitive material was grown by RF magnetron sputtering, by depositing Si and Ge thin film simultaneously from two deposition targets in an oxygen (O) and argon environment at room temperature and at 400°C. Film composition was varied by adjusting RF power applied to the silicon target and by varying the oxygen flow of the gas mixture in the deposition chamber. The atomic compositions of Si, Ge, and O in the deposited thin film were determined and analyzed using energy dispersive X-ray spectroscopy (EDS). The influence of changing Ge and Si and O compositions on temperature coefficient of resistance (TCR), and resistivity were studied. Different fabrication scenarios have been used to vary the Ge, Si and O concentrations. The highest achieved TCRs and the corresponding resistivities at room temperature were -4.86 %/K and -6.43 %/K, and 2.45×102 Ω cm and 3.34×102 Ω cm using Si0.195Ge0.706O0.099and Si0.127Ge0.835O0.038 for films deposited at room temperature and at 400 oC, respectively.
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Qi Cheng and M. Almasri "Silicon germanium oxide (SixGe1-xOy) infrared material for uncooled infrared detection", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72980K (6 May 2009);

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