6 May 2009 Background limited performance of long-wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
Author Affiliations +
Abstract
Recent advances in growth techniques, structure design and processing have lifted the performance of Type-II InAs/GaSb superlattice photodetectors. The introduction of a M-structure design improved both the dark current and R0A of Type-II photodiodes. This new structure combined with a thick absorbing region demonstrated background limited performance at 77K for a 300K background and a 2-π field of view. A focal plane array with a 9.6 μm 50% cutoff wavelength was fabricated with this design and characterized at 80K. The dark current of individual pixels was measured around 1.3 nA, 7 times lower than previous superlattice FPAs. This led to a higher dynamic range and longer integration times. The quantum efficiency of detectors without anti-reflective coating was 72%. The noise equivalent temperature difference reached 23 mK. The deposition of an anti-reflective coating improved the NEDT to 20 mK and the quantum efficiency to 89%.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre-Yves Delaunay, Pierre-Yves Delaunay, Binh-Minh Nguyen, Binh-Minh Nguyen, Manijeh Razeghi, Manijeh Razeghi, } "Background limited performance of long-wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981Q (6 May 2009); doi: 10.1117/12.818271; https://doi.org/10.1117/12.818271
PROCEEDINGS
12 PAGES


SHARE
Back to Top