6 May 2009 InAs/GaSb superlattice focal plane array infrared detectors: manufacturing aspects
Author Affiliations +
InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd generation thermal imaging systems with excellent detector performance. A multi-wafer molecular beam epitaxy (MBE) growth process on 3"-GaSb substrates, which allows simultaneous growth on five substrates with excellent homogeneity has been developed. A reliable III/V-process technology for badge processing of single-color and dual-color FPAs has been set up to facilitate fabrication of mono- and bi-spectral InAs/GaSb SL detector arrays for the mid-IR spectral range. Mono- and bispectral SL camera systems with different pitch and number of pixels have been fabricated. Those imaging systems show excellent electro-optical performance data with a noise equivalent temperature difference (NETD) around 10 mK.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Rutz, Frank Rutz, Robert Rehm, Robert Rehm, Johannes Schmitz, Johannes Schmitz, Joachim Fleissner, Joachim Fleissner, Martin Walther, Martin Walther, Ralf Scheibner, Ralf Scheibner, Johann Ziegler, Johann Ziegler, } "InAs/GaSb superlattice focal plane array infrared detectors: manufacturing aspects", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981R (6 May 2009); doi: 10.1117/12.819090; https://doi.org/10.1117/12.819090

Back to Top