6 May 2009 InAs/GaSb superlattice focal plane array infrared detectors: manufacturing aspects
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Abstract
InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd generation thermal imaging systems with excellent detector performance. A multi-wafer molecular beam epitaxy (MBE) growth process on 3"-GaSb substrates, which allows simultaneous growth on five substrates with excellent homogeneity has been developed. A reliable III/V-process technology for badge processing of single-color and dual-color FPAs has been set up to facilitate fabrication of mono- and bi-spectral InAs/GaSb SL detector arrays for the mid-IR spectral range. Mono- and bispectral SL camera systems with different pitch and number of pixels have been fabricated. Those imaging systems show excellent electro-optical performance data with a noise equivalent temperature difference (NETD) around 10 mK.
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Frank Rutz, Frank Rutz, Robert Rehm, Robert Rehm, Johannes Schmitz, Johannes Schmitz, Joachim Fleissner, Joachim Fleissner, Martin Walther, Martin Walther, Ralf Scheibner, Ralf Scheibner, Johann Ziegler, Johann Ziegler, } "InAs/GaSb superlattice focal plane array infrared detectors: manufacturing aspects", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981R (6 May 2009); doi: 10.1117/12.819090; https://doi.org/10.1117/12.819090
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