High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate

Binh-Minh Nguyen; Darin Hoffman; Edward Kwei-wei Huang; Pierre-Yves Delaunay; Manijeh Razeghi

doi:10.1117/12.818373

Translator Disclaimer

7 May 2009 High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate

Binh-Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang, Pierre-Yves Delaunay, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72981T (2009) https://doi.org/10.1117/12.818373
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

In recent years, Type II InAs/GaSb superlattices grown on GaSb substrate have achieved significant advances in both structural design and material growth, making Type II superlattice infrared detector a rival competitor to the state-of-the-art MCT technology. However, the limited size and strong infrared absorption of GaSb substrates prevent large format type-II superlattice infrared imagers from being realized. In this work, we demonstrate type-II superlattices grown on GaAs substrates, which is a significant step toward third generation infrared imaging at low cost. The device performances of Type II superalttice photodetectors grown on these two substrates are compared.

Citation Download Citation

Binh-Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang, Pierre-Yves Delaunay, and Manijeh Razeghi "High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981T (7 May 2009); https://doi.org/10.1117/12.818373

ACCESS THE FULL ARTICLE