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7 May 2009 High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate
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In recent years, Type II InAs/GaSb superlattices grown on GaSb substrate have achieved significant advances in both structural design and material growth, making Type II superlattice infrared detector a rival competitor to the state-of-the-art MCT technology. However, the limited size and strong infrared absorption of GaSb substrates prevent large format type-II superlattice infrared imagers from being realized. In this work, we demonstrate type-II superlattices grown on GaAs substrates, which is a significant step toward third generation infrared imaging at low cost. The device performances of Type II superalttice photodetectors grown on these two substrates are compared.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Binh-Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang, Pierre-Yves Delaunay, and Manijeh Razeghi "High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981T (7 May 2009);

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