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7 May 2009High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate
In recent years, Type II InAs/GaSb superlattices grown on GaSb substrate have achieved significant
advances in both structural design and material growth, making Type II superlattice infrared detector
a rival competitor to the state-of-the-art MCT technology. However, the limited size and strong
infrared absorption of GaSb substrates prevent large format type-II superlattice infrared imagers from
being realized. In this work, we demonstrate type-II superlattices grown on GaAs substrates, which is
a significant step toward third generation infrared imaging at low cost. The device performances of
Type II superalttice photodetectors grown on these two substrates are compared.