7 May 2009 LW Hawk: a 16 μm pitch full-TV LW IRFPA made from HgCdTe grown by MOVPE
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Abstract
This paper describes the fabrication and performance of our LW Hawk arrays. These are Full-TV (640x512) LW infrared detectors at small pitch (16 μm) made from HgCdTe grown by Metal Organic Vapour Phase Epitaxy (MOVPE). The detectors are staring, focal planes consisting of HgCdTe mesa-diode arrays bump bonded to silicon read-out circuits. The HgCdTe structure is grown on GaAs and consists of an absorber layer sandwiched between wider band-gap cladding layers. Device processing is wafer-scale. This is an extension of the work reported in previous years with the innovation of dry etching for mesa isolation. The GaAs substrate is removed after bump bonding to minimise the thermal stress on cooling. The technology will be described. Results will be presented which show operability of 99.96% with a median NETD of 32 mK, reducing to 22 mK in binning mode. The results of various imaging trials will also be presented.
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L. G. Hipwood, L. G. Hipwood, C. L. Jones, C. L. Jones, J. Price, J. Price, M. Wilson, M. Wilson, C. Maxey, C. Maxey, J. Fitzmaurice, J. Fitzmaurice, P. Knowles, P. Knowles, } "LW Hawk: a 16 μm pitch full-TV LW IRFPA made from HgCdTe grown by MOVPE", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729820 (7 May 2009); doi: 10.1117/12.817816; https://doi.org/10.1117/12.817816
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