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6 May 2009 Morphology issues of HgCdTe samples grown by MOCVD
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Abstract
Experimental results concerned morphology improvement of HgCdTe layers grown by MOCVD on GaAs substrates are presented. Selected growth parameters on morphology state have been discussed. The substrate issues like its quality and crystallographic orientation as well as misorientation play considerable role in final layer smoothness. We study HgCdTe layer thickness on its surface roughness. The MBE/MOCVD combination method had been adopted for CdTe buffer layer deposition. Extensive characterization studies using accessible equipment and methods: atomic force microscopy (AFM), secondary electron microscopy (SEM), laser scatterometer and Nomarski microscopy have provided invaluable information about the connection between defect formation and the influence of specific growth parameters.
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P. Madejczyk, A. Piotrowski, W. Gawron, K. Klos, A. Rogalski, and J. Rutkowski "Morphology issues of HgCdTe samples grown by MOCVD", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729825 (6 May 2009); https://doi.org/10.1117/12.823938
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