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7 May 2009 Development of a 0.1eV bandgap semiconductor at the Honeywell Research Center (1959 - 1985)
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Abstract
We delineate and discuss the more significant developments in the corporate and DOD funded (Hg,Cd)Te program initiated and conducted at the Honeywell Research Center, located in Minneapolis, MN. This includes a discussion of the candidate materials initially investigated, the selection process and the basis for the decision to pursue the development of the ternary (Hg,Cd)Te. We describe the various growth approaches investigated, present the results and discuss the challenges. The integrated investigation included an intensive materials study and the evaluation of the electrical, mechanical, optical and sensor properties of this material. These developments contributed to making (Hg,Cd)Te the dominant long wavelength sensor material.
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Joe Schmit, Paul Kruse, and Ernie Stelzer "Development of a 0.1eV bandgap semiconductor at the Honeywell Research Center (1959 - 1985)", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982R (7 May 2009); https://doi.org/10.1117/12.817398
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