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6 May 2009 InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm
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In this work, we present the study on In0.53Ga0.47As/GaAs0.51Sb0.49 type-II heterojunction PIN diodes and Separate Absorption, Charge and Multiplication (SACM) APDs utilising In0.52Al0.48As as the multiplication layer and In0.53Ga0.47As/GaAs0.51Sb0.49 type-II heterostructures as the absorption layer. In0.52Al0.48As lattice matched to InP has been shown to have superior excess noise characteristics and multiplication with relatively low temperature dependence compared to InP. Furthermore, the type-II staggered band line-up leads to a narrower effective bandgap of approximately 0.49 eV corresponding to the APD cut off wavelength of 2.4 μm. The device exhibited low dark current densities near breakdown. The device also exhibited multiplication in excess of 100 at 200 K.
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Y. L. Goh, D. S. G. Ong, S. Zhang, J. S. Ng, C. H. Tan, and J. P. R. David "InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729837 (6 May 2009);

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