Paper
6 May 2009 Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications
Jan Vermeiren, Urbain Van Bogget, Guido Van Horebeek, Jonas Bentell, Peet Verbeke, Thierry Colin
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Abstract
InGaAs is the material of preference for uncooled imaging in the [0.9-1.7 μm] SWIR range, as it can be manufactured on low cost InP substrates in a mainstream technology for optical telecommunications. By removing the substrate the spectral range can be extended to the [0.6 - 1.7 μm] range. In this way low cost, room temperature operated FPAs cameras for imaging and hyperspectral applications can be developed. The FPA is built around a low power CTIA stage with 3 S&H capacitors in the 20*20 um2 unit cell. This approach results in a synchronous shutter operation, which will support both ITR and IWR operation. In IWR mode the integration dead time is limited to max. 10 μsec. The CDS operation yields in a high sensitivity combined with a low noise: This presentation will focus on the development of a 20 μm pitch 320*256 device, with the following main characteristics: 20 μV/e-sensitivity and < 60 e-noise. The 4 low-power, differential outputs are enabling to drive an output load of > 30 pF at 40 Msamples/sec each, resulting in a > 1700 Hz frame rate, while at the same time the overall nominal power dissipation is < 200 mW. The ROIC is realized in a 0.35 um technology and the outputs are designed to drive directly a 3.3 V, 1.5 V VCM differential AD convertor. The circuit also supports a NDR operating mode to further reduce the noise of the FPA. A small from factor camera with Cameralink output is built around this FPA.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Vermeiren, Urbain Van Bogget, Guido Van Horebeek, Jonas Bentell, Peet Verbeke, and Thierry Colin "Low-noise, fast frame-rate InGaAs 320 x 256 FPA for hyperspectral applications", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72983N (6 May 2009); https://doi.org/10.1117/12.818948
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Cited by 4 scholarly publications.
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KEYWORDS
Sensors

Staring arrays

Indium gallium arsenide

Short wave infrared radiation

Hyperspectral imaging

Capacitors

Cameras

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