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30 April 2009 Tunable THz plasmon resonances in InGaAs/InP HEMT
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Abstract
Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 - 50 cm-1. The resonance frequency red-shifts with increasing negative gate bias as expected. Photo-response to a tunable far-IR laser is reported. The device may have application in high-frame-rate THz array detectors for spectral imaging with real-time chemical analysis.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. E. Peale, H. Saxena, W. R. Buchwald, G. C. Dyer, and S. J. Allen Jr. "Tunable THz plasmon resonances in InGaAs/InP HEMT", Proc. SPIE 7311, Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense, 73110I (30 April 2009); https://doi.org/10.1117/12.818520
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