18 May 2009 Wafer fused InP-GaAs optically pumped semiconductor disk laser operating at 1.57 μm
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Abstract
A wafer fusing was applied to integrate an InP-based active medium and a GaAs/AlGaAs distributed Bragg reflector in an optically pumped semiconductor disk laser. Over 50 mW of output power at room temperature in 1570-1585 nm spectral range was demonstrated. The results of this study reveal an important finding: the wafer fusion can be used in emitters with high power. This approach would allow for monolithic integration of lattice-mismatched compounds, quantum-well and quantum-dot based media and promises substantial wavelength tailoring of semiconductor disk lasers.
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Jari Lyytikäinen, Jussi Rautiainen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg Okhotnikov "Wafer fused InP-GaAs optically pumped semiconductor disk laser operating at 1.57 μm", Proc. SPIE 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II, 73550C (18 May 2009); doi: 10.1117/12.820672; https://doi.org/10.1117/12.820672
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