Quantum well heterostructures studied by deep-level transient spectroscopy

Jitka Kosíková; Karel Žd'ánský; Alok Rudra; Eli Kapon

doi:10.1117/12.834242

18 May 2009 Quantum well heterostructures studied by deep-level transient spectroscopy

Jitka Kosíková, Karel Žd'ánský, Alok Rudra, Eli Kapon

Proceedings Volume 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II; 73550D (2009) https://doi.org/10.1117/12.834242
Event: SPIE Optics + Optoelectronics, 2009, Prague, Czech Republic

Abstract

Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements (C-V) have been performed on AlGaAs/GaAs diode structures containing quantum wells (QWs) with graded or stepped barriers content and compared with structures without QWs. DLTS peaks have been observed only for the structures containing the QWs under reduced voltage pulse excitation. A mechanism of carrier capture into and escape from the quantum wells has been discussed.

Citation Download Citation

Jitka Kosíková, Karel Žd'ánský, Alok Rudra, and Eli Kapon "Quantum well heterostructures studied by deep-level transient spectroscopy", Proc. SPIE 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II, 73550D (18 May 2009); https://doi.org/10.1117/12.834242

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