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18 May 2009 Quantum well heterostructures studied by deep-level transient spectroscopy
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Abstract
Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements (C-V) have been performed on AlGaAs/GaAs diode structures containing quantum wells (QWs) with graded or stepped barriers content and compared with structures without QWs. DLTS peaks have been observed only for the structures containing the QWs under reduced voltage pulse excitation. A mechanism of carrier capture into and escape from the quantum wells has been discussed.
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Jitka Kosíková, Karel Žd'ánský, Alok Rudra, and Eli Kapon "Quantum well heterostructures studied by deep-level transient spectroscopy", Proc. SPIE 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II, 73550D (18 May 2009); https://doi.org/10.1117/12.834242
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