18 May 2009 Sensitivity of a receiver using GaInAsSb/AlGaAsSb SAM avalanche photodiode for long-wavelength optical communication systems in the mid-infrared spectral range
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Abstract
Low- noise avalanche photodiodes for the spectral range of 1.6-2.4 μm were created using the GaInAsSb solid solution in the absorption region and the wide-gap GaAlX(As)Sb alloy of resonant composition (x=0.04) in the multiplication region. This APD has a very high ratio of ionization coefficients, β/α>30 and low excess noise factor, F~1.6 (M=10). The sensitivity of a receiver for longwavelength communication (λ=1.6-2.5 μm) based on GaInAsSb/AlGa(As)Sb SAM APD is reported. The sensitivity for a direct detection receiver using the SAM APD was calculated according to the treatment of Personick at bit rate B=500 Mbit/s. The dependence of minimum detectable power η<PAPD> on multiplication M for the SAM APD for the wavelength λ=2.1 μm was calculated and compared with one for a standard Ge APD operating at λ=1.55 μm. A minimum detectable power level η<PAPD> = -42.3 dBm at Mopt=34-39 and η<PAPD>=-41.8 dBm at Mopt=10 of the receivers with the GaInAsSb/GaAl(As)Sb SAM APD and the Ge APD, respectively were obtained. These results demonstrate the potential of an optical receiver with the GaInAsSb/GaAl(As)Sb SAM APD for use in mid-IR wavelength optical communication system as well as of great interest for their potential applications in laser range-finding system.
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M. P. Mikhailova, M. P. Mikhailova, I. A. Andreev, I. A. Andreev, E. V. Kunitsyna, E. V. Kunitsyna, Yu. P. Yakovlev, Yu. P. Yakovlev, } "Sensitivity of a receiver using GaInAsSb/AlGaAsSb SAM avalanche photodiode for long-wavelength optical communication systems in the mid-infrared spectral range", Proc. SPIE 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II, 735511 (18 May 2009); doi: 10.1117/12.821004; https://doi.org/10.1117/12.821004
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