Translator Disclaimer
18 May 2009 Measuring small thickness changes of a thin film by white-light spectral interferometry
Author Affiliations +
Abstract
A white-light spectral interferometric technique is used for measuring small thickness changes of a SiO2 thin film grown by thermal oxidation on a Si substrate. The technique is based on recording of the spectral interferograms in a Michelson interferometer with one of its mirrors replaced by a thin-film structure. From the spectral interferograms, the nonlinear-like phase function related to the phase change on reflection from the thin-film structure is retrieved. The phase function is fitted to the theoretical one to obtain the thin-film thickness precisely provided that the optical constants of the thin-film structure are known. This procedure is used for measuring small thickness changes of a SiO2 thin film attributed to different dopant concentrations of a Si substrate. The results of the technique are compared with those obtained by spectral reflectometry and very good agreement is confirmed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Hlubina, J. Lunácek, D. Ciprian, and M. Lunácková "Measuring small thickness changes of a thin film by white-light spectral interferometry", Proc. SPIE 7356, Optical Sensors 2009, 735618 (18 May 2009); https://doi.org/10.1117/12.820005
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top