Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics

Wei-Chih Tsai; Shui-Jinn Wang; Chih-Ren Tseng; Rong-Ming Ko; Jia-Chuan Lin

doi:10.1117/12.820539

18 May 2009 Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics

Wei-Chih Tsai, Shui-Jinn Wang, Chih-Ren Tseng, Rong-Ming Ko, Jia-Chuan Lin

Proceedings Volume 7356, Optical Sensors 2009; 73561D (2009) https://doi.org/10.1117/12.820539
Event: SPIE Optics + Optoelectronics, 2009, Prague, Czech Republic

Abstract

In this study, well-ordered and vertically-aligned metal (nickel (Ni)/zinc (Zn)) and metal oxides (NiO/ZnO) nano heterojunctions (NHJs) were grown inside the nanopores of anodic aluminum oxide template (AAOT) using electrochemical deposition (ECD) and thermal oxidization. The prepared NHJs are with a controllable length and diameter. The electrical properties of NiO/ZnO NHJs show a rectifying behavior of a p-n junction, while the Ni/Zn NHJs show an ohmic behavior. The optoelectronic characteristics demonstrate that the NiO/ZnO NHJs have fairly good sensitivity and response to the ultraviolet (UV) light (366 nm) with decrease in Vth by about 75% and an increase in J_r by about 80% @ 6 mW/cm². The low dimension of NHJs shows profound quantum confinement effect, which would be potential applications on nano integrated photonics, such as photodetectors, optical sensors and biosensors.

Citation Download Citation

Wei-Chih Tsai, Shui-Jinn Wang, Chih-Ren Tseng, Rong-Ming Ko, and Jia-Chuan Lin "Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics", Proc. SPIE 7356, Optical Sensors 2009, 73561D (18 May 2009); https://doi.org/10.1117/12.820539

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