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18 May 2009 Interaction of intense ultrashort XUV pulses with silicon
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Single shot radiation damage of bulk silicon induced by ultrashort XUV pulses was studied. The sample was chosen because it is broadly used in XUV optics and detectors where radiation damage is a key issue. It was irradiated at FLASH facility in Hamburg, which provides intense femtosecond pulses at 32.5 nm wavelength. The permanent structural modifications of the surfaces exposed to single shots were characterized by means of phase contrast optical microscopy and atomic force microscopy. Mechanisms of different, intensity dependent stages of the surface damage are described.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Sobierajski, D. Klinger, M. Jurek, J. B. Pelka, L. Juha, J. Chalupský, J. Cihelka, V. Hakova, L. Vysin, U. Jastrow, N. Stojanovic, S. Toleikis, H. Wabnitz, J. Krzywinski, S. Hau-Reige, and R. London "Interaction of intense ultrashort XUV pulses with silicon", Proc. SPIE 7361, Damage to VUV, EUV, and X-Ray Optics II, 736107 (18 May 2009);

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