Translator Disclaimer
18 May 2009 Radiation hardness of AlxGa1-xN photodetectors exposed to Extreme UltraViolet (EUV) light beam
Author Affiliations +
We report on the results of fabrication and optoelectrical characterization of Gallium Nitride (GaN) based Extreme UltraViolet (EUV) photodetectors. Our devices were Schottky photodiodes with a finger-shaped rectifying contact, allowing better penetration of light into the active region. GaN layers were epitaxially grown on Silicon (111) by Metal- Organic-Chemical Vapor Deposition (MOCVD). Spectral responsivity measurements in the Near UltraViolet (NUV) wavelength range (200-400 nm) were performed to verify the solar blindness of the photodetectors. After that the devices were exposed to the EUV focused beam of 13.5 nm wavelength using table-top EUV setup. Radiation hardness was tested up to a dose of 3.3·1019 photons/cm2. Stability of the quantum efficiency was compared to the one measured in the same way for a commercially available silicon based photodiode. Superior behavior of GaN devices was observed at the wavelength of 13.5 nm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawel E. Malinowski, Joachim John, Frank Barkusky, Jean Yves Duboz, Anne Lorenz, Kai Cheng, Joff Derluyn, Marianne Germain, Piet De Moor, Kyriaki Minoglou, Armin Bayer, Klaus Mann, Jean-Francois Hochedez, Boris Giordanengo, Gustaaf Borghs, and Robert Mertens "Radiation hardness of AlxGa1-xN photodetectors exposed to Extreme UltraViolet (EUV) light beam", Proc. SPIE 7361, Damage to VUV, EUV, and X-Ray Optics II, 73610T (18 May 2009);

Back to Top