28 May 2009 Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices
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Abstract
This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF<2.8dB, S21>13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.
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Edwin C. Becerra-Alvarez, Federico Sandoval-Ibarra, José M. de la Rosa, "Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices", Proc. SPIE 7363, VLSI Circuits and Systems IV, 73630Q (28 May 2009); doi: 10.1117/12.820911; https://doi.org/10.1117/12.820911
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