Attainability of negative differential conductance in tunnel Schottky structures with 2D channels: theory and experiment

Michael N. Feiginov; Igor N. Kotel'nikov

doi:10.1117/12.821510

28 May 2009 Attainability of negative differential conductance in tunnel Schottky structures with 2D channels: theory and experiment

Michael N. Feiginov, Igor N. Kotel'nikov

Author Affiliations +

Proceedings Volume 7364, Nanotechnology IV; 73640C (2009) https://doi.org/10.1117/12.821510
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany

Abstract

In the paper, we present the experimental data that demonstrate the conductance decrease with bias in the tunnel Al/GaAs Schottky structure with delta-n-doped 2D channel. The conductance is decreasing due to the increase in the tunnel-barrier height and the corresponding drop in the barrier tunnel transparency with bias. Theoretical calculations are in very good agreement with the experimental data, they also show that the mechanism should lead to the negative value of the differential conductance, if the separation between the subbands in the 2D channel is sufficiently large. The Al/InAlGaAs/InAlAs and Ti/GaN/AlGaN heterostructures with tunnel Schottky-barriers are suggested, where the negative differential conductance should be achievable.

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Michael N. Feiginov and Igor N. Kotel'nikov "Attainability of negative differential conductance in tunnel Schottky structures with 2D channels: theory and experiment", Proc. SPIE 7364, Nanotechnology IV, 73640C (28 May 2009); https://doi.org/10.1117/12.821510

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