20 May 2009 Ge-on-silicon waveguide photodetectors for optical telecommunications
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Abstract
This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of waveguide integrated photodetectors at 1.53 μm wavelength under 4 V reverse bias is 42 GHz.
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Johann Osmond, Laurent Vivien, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Y. Lecunff, Suzanne Laval, "Ge-on-silicon waveguide photodetectors for optical telecommunications", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660A (20 May 2009); doi: 10.1117/12.821708; http://dx.doi.org/10.1117/12.821708
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KEYWORDS
Photodetectors

Waveguides

Germanium

Silicon

Integrated optics

Telecommunications

PIN photodiodes

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