Ge-on-silicon waveguide photodetectors for optical telecommunications

Johann Osmond; Laurent Vivien; Jean-Marc Fédéli; Delphine Marris-Morini; Paul Crozat; Jean-François Damlencourt; Eric Cassan; Y. Lecunff; Suzanne Laval

doi:10.1117/12.821708

20 May 2009 Ge-on-silicon waveguide photodetectors for optical telecommunications

Johann Osmond, Laurent Vivien, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Y. Lecunff, Suzanne Laval

Author Affiliations +

Proceedings Volume 7366, Photonic Materials, Devices, and Applications III; 73660A (2009) https://doi.org/10.1117/12.821708
Event: SPIE Europe Microtechnologies for the New Millennium, 2009, Dresden, Germany

Abstract

This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of waveguide integrated photodetectors at 1.53 μm wavelength under 4 V reverse bias is 42 GHz.

Citation Download Citation

Johann Osmond, Laurent Vivien, Jean-Marc Fédéli, Delphine Marris-Morini, Paul Crozat, Jean-François Damlencourt, Eric Cassan, Y. Lecunff, and Suzanne Laval "Ge-on-silicon waveguide photodetectors for optical telecommunications", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660A (20 May 2009); https://doi.org/10.1117/12.821708

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