20 May 2009 Ge-on-silicon waveguide photodetectors for optical telecommunications
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This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of waveguide integrated photodetectors at 1.53 μm wavelength under 4 V reverse bias is 42 GHz.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johann Osmond, Johann Osmond, Laurent Vivien, Laurent Vivien, Jean-Marc Fédéli, Jean-Marc Fédéli, Delphine Marris-Morini, Delphine Marris-Morini, Paul Crozat, Paul Crozat, Jean-François Damlencourt, Jean-François Damlencourt, Eric Cassan, Eric Cassan, Y. Lecunff, Y. Lecunff, Suzanne Laval, Suzanne Laval, } "Ge-on-silicon waveguide photodetectors for optical telecommunications", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660A (20 May 2009); doi: 10.1117/12.821708; https://doi.org/10.1117/12.821708

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