20 May 2009 8 Gb/s 0.5 V integrated Ge-on-SOI photodetector
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Abstract
A vertically illuminated photodetector based on Ge-on-SOI, which operates at 8 Gb/s for reverse bias as low as 0.5 V, is presented. The integrated photodetector also features low dark current and good photogenerated carrier collection efficiency.
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Johann Osmond, Giovanni Isella, Daniel Chrastina, Hans von Känel, Rolf Kaufmann, Laurent Vivien, Gilles Rasigade, Delphine Marris-Morini, Paul Crozat, Eric Cassan, Suzanne Laval, "8 Gb/s 0.5 V integrated Ge-on-SOI photodetector", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660B (20 May 2009); doi: 10.1117/12.821714; http://dx.doi.org/10.1117/12.821714
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KEYWORDS
Photodetectors

Germanium

Diodes

Silicon

External quantum efficiency

Eye

Integrated optics

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