20 May 2009 8 Gb/s 0.5 V integrated Ge-on-SOI photodetector
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A vertically illuminated photodetector based on Ge-on-SOI, which operates at 8 Gb/s for reverse bias as low as 0.5 V, is presented. The integrated photodetector also features low dark current and good photogenerated carrier collection efficiency.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johann Osmond, Giovanni Isella, Daniel Chrastina, Hans von Känel, Rolf Kaufmann, Laurent Vivien, Gilles Rasigade, Delphine Marris-Morini, Paul Crozat, Eric Cassan, Suzanne Laval, "8 Gb/s 0.5 V integrated Ge-on-SOI photodetector", Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660B (20 May 2009); doi: 10.1117/12.821714; https://doi.org/10.1117/12.821714

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