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24 August 2009 Nanoscale strain analysis of an edge dislocation
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Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 737508 (2009) https://doi.org/10.1117/12.839009
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China
Abstract
The strain field of an edge dislocation in silicon was experimentally investigated. High-resolution transmission electron microscopy and geometric phase analysis were used to map the strain fields of the edge dislocation. The strain measurement results were compared with the Peierls-Nabarro dislocation model. The comparison shows that the Peierls-Nabarro model is an appropriate theoretical model to describe the strain fields of edge dislocation in silicon.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. W. Zhao and Y. M. Xing "Nanoscale strain analysis of an edge dislocation", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 737508 (24 August 2009); https://doi.org/10.1117/12.839009
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