25 August 2009 Epitaxial growth of La0.5Sr0.5MnO3 thin film and its electrical performance
Author Affiliations +
Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 73750X (2009) https://doi.org/10.1117/12.839040
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China
Abstract
Epitaxial growth behavior of the La0.5Sr0.5MnO3 thin films prepared at different annealing temperatures by Spin-Coating method on a Si(100) substrate have been studied. The thin films have a low resistivity and metallic conducting features. The results reveal that for the epitaxial growth of LSMO thin films, 800°C is the optimal annealing temperature. The structure and surface morphology of the films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The surface resistance of the films prepared with different conditions was measured by four-point dc method. Emphases are laid on the discussions of the epitaxial growth of the LSMO thin films.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li-qiang Xin, Xing-hua Fu, Wen-hong Tao, "Epitaxial growth of La0.5Sr0.5MnO3 thin film and its electrical performance", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73750X (25 August 2009); doi: 10.1117/12.839040; https://doi.org/10.1117/12.839040
PROCEEDINGS
6 PAGES


SHARE
Back to Top