Epitaxial growth of La0.5Sr0.5MnO3 thin film and its electrical performance

Li-qiang Xin; Xing-hua Fu; Wen-hong Tao

doi:10.1117/12.839040

25 August 2009 Epitaxial growth of La_0.5Sr_0.5MnO₃ thin film and its electrical performance

Li-qiang Xin, Xing-hua Fu, Wen-hong Tao

Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 73750X (2009) https://doi.org/10.1117/12.839040
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China

Abstract

Epitaxial growth behavior of the La_0.5Sr_0.5MnO₃ thin films prepared at different annealing temperatures by Spin-Coating method on a Si(100) substrate have been studied. The thin films have a low resistivity and metallic conducting features. The results reveal that for the epitaxial growth of LSMO thin films, 800°C is the optimal annealing temperature. The structure and surface morphology of the films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The surface resistance of the films prepared with different conditions was measured by four-point dc method. Emphases are laid on the discussions of the epitaxial growth of the LSMO thin films.

Citation Download Citation

Li-qiang Xin, Xing-hua Fu, and Wen-hong Tao "Epitaxial growth of La_0.5Sr_0.5MnO₃ thin film and its electrical performance", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73750X (25 August 2009); https://doi.org/10.1117/12.839040

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