25 August 2009 Experimental investigation of p-Si (100) surface modified by ion implantation
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Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 73755F (2009) https://doi.org/10.1117/12.839342
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China
Abstract
Surface strengthening and residual stress in Ti+ implanted p-Si (100) wafers are investigated by scanning electron microscopy, X-ray diffraction, nano-indentation and micro-Raman spectroscopy. The experimental results revealed that the crystallinity decreases gradually in transition area, whose structure varies continuously from the crystalline Si to amorphous phase which appears in ion implanted area. Moreover, the hardness and elastic modulus increase gradually in the transition area. Compressive intrinsic-stress that comes from lattice mismatch between the implanted layer and Si substrate is one factor giving rise to residual stresses.
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Z. K. Lei, Z. K. Lei, X. M. Pan, X. M. Pan, Y. L. Kang, Y. L. Kang, H. Yun, H. Yun, Z. X. Mu, Z. X. Mu, } "Experimental investigation of p-Si (100) surface modified by ion implantation", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73755F (25 August 2009); doi: 10.1117/12.839342; https://doi.org/10.1117/12.839342
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