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17 June 2009 Spin-dependent transport of electrons through ferromagnetic/insulator/semiconductor nanostructures
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Abstract
The model of spin-dependent electron transport through ferromagnetic/insulator/semiconductor nanostructures was developed on the basis of the transport equation accounting for carrier scattering and the image forces at the interfaces. Modeling was performed for Co/Al2O3/p-Si and CoFe/MgO/n-Si nanostructures. Tunneling magnetoresistance was modeled to be 7-13 % in Co/Al2O3/p-Si nanostructures biased in range from 0.7 to 2.0 V. A scattering well in the collector region was shown to increase the tunneling magnetoresistance by 4-5 %. In CoFe/MgO/n-Si nanostructures the tunneling magnetoresistance varivaries from 5 to 50% when the external bias is ranged from 0.1 to 2 V.
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Tatiana N. Sidorova, Alexander L. Danilyuk, Vviktor E. Borisenko, F. Arnaud d'Avitaya, and J.-L. Lazzari "Spin-dependent transport of electrons through ferromagnetic/insulator/semiconductor nanostructures", Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 737708 (17 June 2009); https://doi.org/10.1117/12.836170
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