17 June 2009 The combined influence of low-flux electrons irradiation and weak magnetic field on silicon microhardness
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Proceedings Volume 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations; 73770M (2009); doi: 10.1117/12.836914
Event: Nano-Design, Technology, Computer Simulations, 2008, Minsk, Belarus
Abstract
The combined influence of low-flux electron irradiation and weak magnetic and electric fields on silicon single-crystal microhardness was investigated. It is shown that the microhardness is more sensitive to low-doses effects irradiation than conductivity. The effect of magnetic and electric fields on the process of secondary radiation defects generation was revealed.
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Yuriy I. Golovin, Alexander A. Dmitrievskiy, Nadezhda Yu. Efremova, Vladimir M. Vasyukov, "The combined influence of low-flux electrons irradiation and weak magnetic field on silicon microhardness", Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 73770M (17 June 2009); doi: 10.1117/12.836914; https://doi.org/10.1117/12.836914
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KEYWORDS
Silicon

Magnetism

Electrons

Crystals

Nanotechnology

Chemical species

Process control

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