Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

Alexander I. Kostrov; Viktor R. Stempitsky; Vladimir N. Kazimirchik

doi:10.1117/12.836973

17 June 2009 Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

Alexander I. Kostrov, Viktor R. Stempitsky, Vladimir N. Kazimirchik

Proceedings Volume 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations; 73770P (2009) https://doi.org/10.1117/12.836973
Event: Nano-Design, Technology, Computer Simulations, 2008, Minsk, Belarus

Abstract

In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

Citation Download Citation

Alexander I. Kostrov, Viktor R. Stempitsky, and Vladimir N. Kazimirchik "Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure", Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 73770P (17 June 2009); https://doi.org/10.1117/12.836973

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