17 June 2009 New approach to the manufacturing of power microwave bipolar transistors at an irradiation of ohmic contacts: a computer simulation
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Proceedings Volume 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations; 737718 (2009); doi: 10.1117/12.837085
Event: Nano-Design, Technology, Computer Simulations, 2008, Minsk, Belarus
Abstract
Method providing possibility of controllable creation of areas with demanded physical and chemical properties is a key condition for radical progress in modern technologies. It is especially actual for creation of areas with the nanometer sizes. Two-dimensional physical modeling of process of an irradiation by phosphorus ions of generated ohmic contacts Mo-Si to the emitter of the silicon bipolar powerful transistor which structure has been made on new and standard technologies for the first time is demonstrated. Possibilities of this method are investigated and confirmed experimentally. In particular, it is shown that there is a possibility of purposeful change of a chemical compound on border Mo-Si, electrophysical properties of contacts molybdenum-silicon, electrophysical characteristics of areas of transistor structure, frequency and power parameters of transistors. Modeling was spent using of a program complex of company SILVACO.
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Yury P. Snitovsky, Vasily A. Efremov, "New approach to the manufacturing of power microwave bipolar transistors at an irradiation of ohmic contacts: a computer simulation", Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 737718 (17 June 2009); doi: 10.1117/12.837085; https://doi.org/10.1117/12.837085
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KEYWORDS
Transistors

Silicon

Microwave radiation

Phosphorus

Standards development

Computer simulations

Manufacturing

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