11 May 2009 Investigation of the development process for high-precision patterning
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73790B (2009) https://doi.org/10.1117/12.824252
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Photomask feature size has decreased in accordance with constant downscaling of semiconductor device size with generation changes in every 2-3 years, as in the ITRS Roadmap. However, since exposure wavelength has been unable to keep its pace with decreasing feature size, resolution enhancement techniques have been used to bring the generation changes in photomask technologies. A typical resolution enhancement technique of using sub-resolution assist features (SRAF) requires patterning of small features and that increases difficulties in mask manufacturing. Under such circumstances, we are presenting a study focusing on EB-resist development in the manufacturing process. In this paper, we study and report development methods aiming to improve develop loading effect and resolution limit.
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Junichi Watanabe, Tsukasa Yamazaki, Masahito Tanabe, Toru Komizo, Amy E. Zweber, Adam C. Smith, "Investigation of the development process for high-precision patterning", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790B (11 May 2009); doi: 10.1117/12.824252; https://doi.org/10.1117/12.824252
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