11 May 2009 Improvement of EUVL mask blank inspection capability at Intel
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73790I (2009) https://doi.org/10.1117/12.824259
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Extreme ultraviolet lithography (EUVL) is a leading technology to succeed optical lithography for high volume production of 22 nm node and beyond. One of the top risks for EUVL is the readiness of defect-free masks, especially the availability of Mo/Si mask blanks with acceptable defect level. Fast, accurate and repeatable defect inspection of substrate and multi-layer (ML) blank is critical for process development by both blank suppliers and mask makers. In this paper we report the results of performance improvements on a latest generation mask blank inspection tool from Lasertec Corporation; the MAGICS M7360 at Intel Corporation's EUV Mask Pilot Line. Inspection repeatability and sensitivity for both quartz substrates (Qz) and ML blanks are measured and compared with the previous Phase I tool M7360. Preliminary results of high speed scan correction mirror implementation are also presented
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andy Ma, Ted Liang, Seh-Jin Park, Guojing Zhang, Tomoya Tamura, Kazunori Omata, Yuta Sato, Hal Kusunose, "Improvement of EUVL mask blank inspection capability at Intel", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790I (11 May 2009); doi: 10.1117/12.824259; https://doi.org/10.1117/12.824259


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